Ferroelectric memory and method of reading the same

Details Ferroelectric memory and method of reading the same Ferroelectric memory and method of reading the same

2005-05-03

2005-05-03

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S117000, C365S203000, C365S204000

Reexamination Certificate

active

06888737

ABSTRACT:
A ferroelectric memory includes wordlines that cross over bitlines with a ferroelectric cell at each crossing. When reading a select cell of the array, sneak currents are drawn from an active bitline. An integration amplifier begins integrating charge propagated by the active bitline, and an active wordline receives a read level voltage. A first integration value is then obtained from the integration amplifier. Following the first integration, the integration amplifier is cleared and the voltage of the active wordline reduced to a quiescent level. Integration and wordline activation are again performed to obtain a second integration value. The second value is subtracted from the first, and the difference compared to a threshold to determine a data value.

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Safari, Ahmad; Panda, K. Rajesh; Janas, Victor F.; “Ferroelectric Ceramics: Processing, Properties & Applications” (Dept. of Ceramic Science and Engineering, Rutgers University, Piscataway NJ 08855, USA) www.rci.rutgers.edu/˜ecerg/projects/ferroelectric.html (50 pages).

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