Ferroelectric memory and method of reading data in the same

Details Ferroelectric memory and method of reading data in the same Ferroelectric memory and method of reading data in the same

2005-01-25

2005-01-25

Auduong, Gene N. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S185200, C365S185080

Reexamination Certificate

active

06847539

ABSTRACT:
Prior to the first read operation for reading data from real memory cells, the second read operation for reading data from dummy memory cells is carried out using reference memory cells. A reduced residual dielectric polarization values of ferroelectric capacitors of the reference memory cells due to heat treatment and the like in manufacturing process, is recovered by the second read operation to an original value before the read access to the real memory cells. Therefore, data in the real memory cells is properly read out in the subsequent first read operation. As a result, it is possible to certainly read data from a ROM area in a ferroelectric memory to which data is written in advance in a test process of the manufacturing process, for example.

REFERENCES:
patent: 6128213 (2000-10-01), Kang
patent: 6370056 (2002-04-01), Chen et al.
patent: 6370058 (2002-04-01), Fukumoto
patent: 2001-234761 (2001-09-01), None

Affiliated with

Also associated with

Rating

Ferroelectric memory and method of reading data in the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric memory and method of reading data in the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory and method of reading data in the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3376881