Ferroelectric memory and method of operating same

Details Ferroelectric memory and method of operating same Ferroelectric memory and method of operating same

2005-02-22

2005-02-22

Tran, Michael (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189090

Reexamination Certificate

active

06859380

ABSTRACT:
A ferroelectric memory reads data from a memory cell by using a sense amplifier to compare a reference potential with a potential produced on a bit line by the memory cell. The reference potential may generated by a pre-charge circuit connected to the sense amplifier. Alternatively, the reference potential may be generated by the memory cell itself. In either case, the reference potential is obtained without the need for a reference cell, and without the need to drive a bit line to the reference potential. Current consumption is accordingly reduced, and integration density can be increased.

REFERENCES:
patent: 5010518 (1991-04-01), Toda
patent: 5608667 (1997-03-01), Osawa
patent: 6110523 (2000-08-01), Yang
patent: 0 928 004 (1999-07-01), None
patent: 11-260066 (1999-09-01), None
patent: WO 0026919 (2000-05-01), None

Affiliated with

Also associated with

Rating

Ferroelectric memory and method of operating same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric memory and method of operating same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory and method of operating same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3487865