Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-12-11
2007-12-11
Pham, Lý Duy (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S065000, C365S189090, C365S203000, C365S207000
Reexamination Certificate
active
11132196
ABSTRACT:
A ferroelectric memory of the present invention comprises: a plurality of normal cells, each of which includes a first ferroelectric capacitor for holding data and a first transistor connected to a first electrode of the first ferroelectric capacitor; a first bit line connected to the first transistor; a first bit line precharge circuit which is a switch circuit provided between the first bit line and a ground; and a word line connected to a gate of the first transistor. The word line is deactivated to disconnect the first ferroelectric capacitor from the first bit line before the first bit line precharge circuit is driven to discharge a potential of the first bit line.
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Gohou Yasushi
Hirano Hiroshige
Iwanari Shunichi
Miki Takashi
Murakuki Yasuo
Matsushita Electric - Industrial Co., Ltd.
Pham Lý Duy
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