Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-31
2005-05-31
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S071000, C257S296000, C257S298000, C257S304000, C257S906000, C438S003000, C438S240000, C365S109000, C365S117000, C365S121000, C430S365000
Reexamination Certificate
active
06900486
ABSTRACT:
Ferroelectric memory includes a hollow formed in a first insulation film. A lower electrode is formed in this hollow by sol-gel method including an application process due to a spin coat method. In this application process, a precursor solution is dripped on a surface of the first insulation film and splashed away due to centrifugal force. Due to this, a first conductive film to being formed has an increased film thickness at portion of the hollow where the precursor solution is ready to correct, or portion to be formed into a lower electrode, and a decreased film thickness at portion other than the hollow. Accordingly, it is satisfactory to etch only the hollow portion when forming a lower electrode by dry-etching the first conductive film.
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Bodner Gerald T.
Louie Wai-Sing
Pham Hoai
Rohm & Co., Ltd.
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