Ferroelectric memory and method for controlling operation of the

Details Ferroelectric memory and method for controlling operation of the Ferroelectric memory and method for controlling operation of the

1996-01-04

1997-03-11

Nguyen, Tan T.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365206, G11C 1122

Patent

active

056108524

ABSTRACT:
In a ferroelectric memory, when data is read out from a memory cell, a variation absorbing circuit minimizes a variation of the voltage on the pair of data signal lines caused by factor other than the current caused due to the polarization of the ferroelectric capacitor. Thus, a voltage not smaller than the coercive voltage can be applied between the opposing electrodes of the ferroelectric capacitor, with the result that a sufficient read-out signal voltage can be obtained.

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patent: 5455786 (1995-10-01), Takeuchi et al.
patent: 5515312 (1996-05-01), Nakakuma et al.
patent: 5517445 (1996-05-01), Imai et al.
Eaton, Jr. et al. Non-Volatile Memories Feb. 18, 1988 -IEEE International Solid-State Circuits Conference pp. 130-131.

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