Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-08-01
2009-10-06
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000, C438S785000
Reexamination Certificate
active
07598095
ABSTRACT:
A ferroelectric capacitor comprises a first electrode comprising an alloy containing a first element and a second element of the periodic table of the elements, the first element being selected from the group consisting of Ir and Ru. A ferroelectric layer is disposed on the first electrode, wherein the ferroelectric layer comprises a ferroelectric material containing the second element. A second electrode is disposed on the ferroelectric layer. The ferroelectric capacitor can be provided as part of a memory cell of a ferroelectric memory.
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Kim Suk-pil
Koo June-mo
Park Young-soo
Shin Sang-min
Brown Valerie
Harness & Dickey & Pierce P.L.C.
Nguyen Ha Tran T
Samsung Electronics Co,. Ltd.
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