Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2006-03-14
2006-03-14
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S189090
Reexamination Certificate
active
07012829
ABSTRACT:
A bit line is connected, via a first pMOS transistor, to a first node whose potential is set at a prescribed negative voltage in advance. The gate voltage of the first pMOS transistor is set at a constant voltage that is slightly lower than its threshold voltage. During a read operation, a current that flows into the bit line from a memory cell in accordance with a residual dielectric polarization value of a ferroelectric capacitor always leaks to the first node, whereby the potential of the first node increases. The logical value of data stored in the memory cell is judged on the basis of a voltage increase at the first node. Since no control circuit for keeping the potential of the first node at the ground potential during a read operation is necessary, the layout size and the power consumption of a ferroelectric memory can be decreased.
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Endo Toru
Hirayama Tomohisa
Kawashima Shoichiro
Arent Fox PLLC.
Phung Anh
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