Ferroelectric memory

Details Ferroelectric memory Ferroelectric memory

1996-02-12

1998-05-19

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

365145, H01L 2976

Patent

active

057539464

ABSTRACT:
A ferroelectric nonvolatile semiconductor memory using a ferroelectric film as a dielectric film between a floating gate and a control gate, wherein a write switching transistor is provided between the floating gate and the bit line so as to enable the application of any voltage to the ferroelectric film using the voltage applied to the control gate and the voltage applied to the bit line and thereby enabling writing by a low voltage.

REFERENCES:
patent: 4893272 (1990-01-01), Eaton, Jr. et al.
patent: 5046043 (1991-09-01), Miller et al.
patent: 5121353 (1992-06-01), Natori
patent: 5414653 (1995-05-01), Onishi et al.
patent: 5515311 (1996-05-01), Mihara
patent: 5541873 (1996-07-01), Nishimura et al.
patent: 5559733 (1996-09-01), McMillan et al.

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