Ferroelectric memory

Details Ferroelectric memory Ferroelectric memory

1998-06-10

1999-11-23

Wojciechowicz, E.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257304, 257306, 257300, 257308, 257309, 257310, H01L 2972

Patent

active

059905085

ABSTRACT:
A contact hole is formed in a protective film 9 so as to communicate with an upper electrode 15. In the contact hole is formed a conductor 13 made of substantially the same material as used for the upper electrode 15, so as to communicate with the upper electrode 15 and extend to the outside of the contact hole. The conductor 13 is electrically connected to a memory cell transistor, by a wiring layer 14.

REFERENCES:
patent: 5633781 (1997-05-01), Saenger et al.
patent: 5751540 (1998-05-01), Lee et al.
N. Tanabe et al., "A Ferroelectric Capacitor over Bit-line (F-COB) Cell for High Density Nonvolatile Ferroelectric Memories", 1995 Symposium on VLSI Technology Digest of Technical Papers, 1995, pp. 123-124.

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