Ferroelectric memory

Details Ferroelectric memory Ferroelectric memory

2009-09-21

2011-11-15

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S109000, C365S049130, C365S222000

Reexamination Certificate

active

08059445

ABSTRACT:
A ferroelectric memory according to an embodiment of the present invention includes a memory cell array including plural memory cells, and provided with plural word lines, plural bit lines, and plural plate lines, each of the plate lines corresponding to at least two of the word lines, an access control circuit configured to perform an access operation to a selected cell which is selected from the memory cells, and a refresh control circuit configured to perform a refresh operation, in a background of the access operation, on a refresh cell which is selected from the memory cells, the refresh control circuit performing the refresh operation when a plate line connected to the selected cell and a bit line connected to the selected cell are at the same potential after the access operation.

REFERENCES:
patent: 5822265 (1998-10-01), Zdenek
patent: 5903492 (1999-05-01), Takashima
patent: 6301145 (2001-10-01), Nishihara
patent: 2000-011665 (2000-01-01), None

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