Ferroelectric memory

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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C365S149000

Reexamination Certificate

active

07542325

ABSTRACT:
A ferroelectric memory comprises a memory cell block of plural serially connected memory cells each including a cell transistor and a ferroelectric capacitor connected in parallel therewith. And the ferroelectric memory comprises a cell transistor resistance measuring circuit, a word line voltage controller, and a word line voltage generator. The cell transistor resistance measuring circuit measures a resistance of the cell transistor. The word line voltage controller controls a word line voltage applied to a gate of the cell transistor based on the resistance of the cell transistor. The word line voltage generator generates the word line voltage.

REFERENCES:
patent: 6151242 (2000-11-01), Takashima
patent: 6697279 (2004-02-01), Schneider et al.
patent: 6934177 (2005-08-01), Takashima
patent: 6990007 (2006-01-01), Shiratake
patent: 7046541 (2006-05-01), Ogiwara et al.
patent: 7064972 (2006-06-01), Takashima
patent: 7099178 (2006-08-01), Shiratake
patent: 7154766 (2006-12-01), Oikawa et al.
patent: 2005/0232035 (2005-10-01), Miyakawa et al.
patent: 2001-250376 (2001-09-01), None

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