Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-10-17
2009-06-02
Phan, Trong (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S149000
Reexamination Certificate
active
07542325
ABSTRACT:
A ferroelectric memory comprises a memory cell block of plural serially connected memory cells each including a cell transistor and a ferroelectric capacitor connected in parallel therewith. And the ferroelectric memory comprises a cell transistor resistance measuring circuit, a word line voltage controller, and a word line voltage generator. The cell transistor resistance measuring circuit measures a resistance of the cell transistor. The word line voltage controller controls a word line voltage applied to a gate of the cell transistor based on the resistance of the cell transistor. The word line voltage generator generates the word line voltage.
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Miyakawa Tadashi
Takashima Daisaburo
Banner & Witcoff Ltd
Kabushiki Kaisha Toshiba
Phan Trong
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