Ferroelectric memory

Details Ferroelectric memory Ferroelectric memory

1994-06-09

1995-10-03

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365203, G11C 1122

Patent

active

054557860

ABSTRACT:
A highly reliable and high speed ferroelectric memory having high degree of integration is provided. In a ferroelectric memory having a plurality of memory cells M1 each constituted by one transistor and one ferroelectric capacitor. In the normal operation, the ferroelectric memory is used as a volatile memory in which a voltage of a storage node ST1 is utilized as the stored information. Both an electric potential at a plate PL1 of the ferroelectric capacitor and a precharge electric potential on a data line DL1(j) are made Vcc/2.

REFERENCES:
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4974204 (1990-11-01), Miller
patent: 5010518 (1991-04-01), Toda

Affiliated with

Also associated with

Rating

Ferroelectric memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1081761