Ferroelectric memory

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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Details

C365S210130

Reexamination Certificate

active

11024718

ABSTRACT:
A ferroelectric memory including a ferroelectric capacitor to store data; a bit line inputting and outputting data with respect to the ferroelectric capacitor; a control circuit having a first field effect transistor to be connected to the bit line and a reference potential, and to lower potential of the bit line when the bit line is connected to the ferroelectric capacitor; a reference ferroelectric capacitor to store fixed data; a reference bit line to input and output data with respect to the reference ferroelectric capacitor; and a second field effect transistor to be connected to the reference bit line and the reference potential, in which the first and second field effect transistors configure a current mirror circuit, is provided.

REFERENCES:
patent: 5237533 (1993-08-01), Papaliolios
patent: 5880989 (1999-03-01), Wilson et al.
patent: 6191971 (2001-02-01), Tanaka et al.
patent: 6487130 (2002-11-01), Endo et al.
patent: 2003/0026123 (2003-02-01), Takashima
patent: 0 721 190 (1996-07-01), None
patent: 1304701 (2003-02-01), None
patent: 1 304 701 (2003-04-01), None
patent: 1 306 851 (2003-05-01), None
patent: 2001319472 (2001-11-01), None
patent: 2004013951 (2004-01-01), None

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