Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-02-20
2007-02-20
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S210130
Reexamination Certificate
active
11024718
ABSTRACT:
A ferroelectric memory including a ferroelectric capacitor to store data; a bit line inputting and outputting data with respect to the ferroelectric capacitor; a control circuit having a first field effect transistor to be connected to the bit line and a reference potential, and to lower potential of the bit line when the bit line is connected to the ferroelectric capacitor; a reference ferroelectric capacitor to store fixed data; a reference bit line to input and output data with respect to the reference ferroelectric capacitor; and a second field effect transistor to be connected to the reference bit line and the reference potential, in which the first and second field effect transistors configure a current mirror circuit, is provided.
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Takeshima Toru
Yoshioka Hiroshi
Arent & Fox LLP
Fujitsu Limited
Le Thong Q.
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