Ferroelectric memory

Details Ferroelectric memory Ferroelectric memory

2007-07-17

2007-07-17

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S065000, C365S189110

Reexamination Certificate

active

11249252

ABSTRACT:
A ferroelectric memory includes a memory cell array having a plurality of memory cells with ferroelectric capacitors arranged therein, a plurality of word lines, a plurality of plate lines, and a plurality of plate line selection circuits. An L-th plate line selection circuit among the plurality of plate line selection circuits includes a first transistor that is provided between an L-th plate line and a supply node for supplying an I-th plate line selection signal and turns on when a K-th word line is set to a selection voltage to thereby supply the I-th plate line selection signal to the L-th plate line, and a second transistor that is provided between the L-th plate line and a first power supply and turns on when the K-th word line is set to a non-selection voltage to thereby set the L-th plate line to a voltage level of the first power supply.

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