Ferroelectric memory

Details Ferroelectric memory Ferroelectric memory

2006-11-21

2006-11-21

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S203000, C365S207000

Reexamination Certificate

active

07139187

ABSTRACT:
In order to charge a pair of ferroelectric capacitors that constitute a memory cell, a voltage setting circuit sets a voltage difference between both ends of the ferroelectric capacitors to be lower than a coercive voltage in a read operation. A differential sense amplifier amplifies a voltage difference between bit lines generated in accordance with a difference in charging amounts of the ferroelectric capacitors. A voltage difference between both ends of the ferroelectric capacitor being charged is lower than the coercive voltage; accordingly, a polarization vector of the ferroelectric capacitor is inhibited from reversing. As a result, the ferroelectric material can be inhibited from deteriorating owing to the read operation, thereby eliminating the restriction on the number of times of read operations in the ferroelectric memory.

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