Ferroelectric memory

Details Ferroelectric memory Ferroelectric memory

2006-05-23

2006-05-23

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S154000, C365S205000, C365S149000, C365S174000

Reexamination Certificate

active

07050323

ABSTRACT:
A nonvolatile memory cell in the form of an SRAM is composed of ferroelectric capacitors and transistors for amplification. The memory cell comprises a first capacitor (FC1) connected between a first terminal (ND1) and a common terminal (CP). A second capacitor (FC2) is connected between a second terminal (ND2) and the common terminal. A first transistor (N1) has a current path connected between the first terminal and a reference terminal (GND) and has a control terminal connected to the second terminal. A second transistor (N2) has a current path connected between the second terminal and the reference terminal and has a control terminal connected to the first terminal.

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