Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-06-14
2005-06-14
Yoha, Connie C. (Department: 2818)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S226000, C365S227000, C365S065000
Reexamination Certificate
active
06906944
ABSTRACT:
A ferroelectric memory has a memory cell array of memory cells having ferroelectric capacitors, which is divided into a plurality of blocks, a boost power circuit provided in each block of the memory cell array to generate a boost voltage required for operation of the memory, a boost power switch provided between a power line connected to an external power terminal and a power supply terminal of each boost power circuit, and remaining ON during normal operation of the memory, a voltage detector circuit for detecting a drop of voltage level of the power line, and a switch control circuit for turning off the boost power switches in the blocks of the memory cell array excluding the boost power switch in a currently selected block in response to the voltage detector circuit.
REFERENCES:
patent: 5363333 (1994-11-01), Tsujimoto
patent: 5532953 (1996-07-01), Ruesch et al.
patent: 5703804 (1997-12-01), Takata et al.
patent: 5781494 (1998-07-01), Bae et al.
patent: 5881012 (1999-03-01), Kawasaki et al.
patent: 6151242 (2000-11-01), Takashima
patent: 6333517 (2001-12-01), Tamaki
patent: 6373744 (2002-04-01), Mano
patent: 2000-123578 (2000-04-01), None
Oowaki Yukihito
Takeuchi Yoshiaki
Banner & Witcoff, LTD.
Kabushiki Kaisha Toshiba
Yoha Connie C.
LandOfFree
Ferroelectric memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ferroelectric memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3467306