Ferroelectric memory

Details Ferroelectric memory Ferroelectric memory

2005-08-02

2005-08-02

Tran, Michael (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189011

Reexamination Certificate

active

06924999

ABSTRACT:
Memory cells each include a latch having storage nodes of data, and ferroelectric capacitors connected to the storage nodes at one ends, respectively, and to a plate line at the other ends. An operation control circuit performs volatile and nonvolatile write operations. A plate driver sets the plate line at a predetermined voltage so that a voltage exceeding a coercive voltage is applied between electrodes of the ferroelectric capacitor connected to either one end of the latch during the volatile write operation. Here, the latch retains the write data. It is therefore possible to dispense with a circuit generating a voltage lower than or equal to the coercive voltage and a circuit for switching voltages. This also eliminates the need for power supply line of the voltage lower than or equal to the coercive voltage, making the wiring area unnecessary. Consequently, the ferroelectric memory can be reduced in chip size.

REFERENCES:
patent: 5146299 (1992-09-01), Lampe et al.
patent: 5381379 (1995-01-01), Fukumoto
patent: 6370058 (2002-04-01), Fukumoto
patent: 6867447 (2005-03-01), Summerfelt
patent: 09-017965 (1997-01-01), None
patent: 2002-269969 (2002-09-01), None
patent: 2003-198361 (2003-07-01), None
patent: 2003-203475 (2003-07-01), None
“A 512 Kbit low-voltage NV-SRAM with the size of a conventional SRAM,” Tohru Miwa et al., 2001 Symposium on VLSI Circuits Digest of Technical Papers, pp. 129-132.
“A Ferroelectric Memory-Based Secure Dynamically Programmable Gate Array,” Shoichi Masui et al., IEEE Journal of Solid-State Circuits, vol. 38, No. 5, May 2003, pp. 715-725.
“A Survey of Circuit Innovations in Ferroelectric Random-Access Memories,” Ali Sheikholeslami et al., Proceedings of the IEEE, vol. 88, No. 5, May 2000, pp. 667-689.

Affiliated with

Also associated with

Rating

Ferroelectric memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3459360