Ferroelectric memory

Details Ferroelectric memory Ferroelectric memory

2005-05-31

2005-05-31

Hoang, Huan (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000, C365S205000

Reexamination Certificate

active

06901002

ABSTRACT:
A ferroelectric memory capable of suppressing false data reading or the like by increasing a read margin is obtained. This ferroelectric memory comprises a circuit applying a read voltage VRto a first electrode and a detector capable of detecting the difference between electric capacitances Cf0and Cf1of a ferroelectric film when the potential difference of a second electrode corresponding to the difference between the electric capacitances Cf0and Cf1of the ferroelectric film is in excess of a detection limit voltage VS. The electric capacitance C2of the second electrode is set to satisfy the following expression:in-line-formulae description="In-line Formulae" end="lead"?Cf0<C2≦½×{(Cf1−Cf0)VR/VS−(Cf1+Cf0)}.in-line-formulae description="In-line Formulae" end="tail"?

REFERENCES:
patent: 5666305 (1997-09-01), Mihara et al.
patent: 2002-251877 (2002-09-01), None

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