Ferroelectric memory

Details Ferroelectric memory Ferroelectric memory

2011-08-02

2011-08-02

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S117000, C365S115000, C365S139000

Reexamination Certificate

active

07990750

ABSTRACT:
A ferroelectric memory of an embodiment of the present invention includes m platelines arranged in a first interconnect layer (m is a positive integer), n bitlines arranged in a second interconnect layer (n is a positive integer), and m×n memory cells arranged at m×n intersection points of the m platelines and the n bitlines, each of the m×n memory cells including a ferroelectric capacitor and a zener diode connected in series between any one of the m platelines and any one of the n bitlines.

REFERENCES:
patent: 2876436 (1959-03-01), Anderson
patent: 2003/0174532 (2003-09-01), Matsushita et al.
patent: 09-116107 (1997-05-01), None

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