Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1992-11-27
1996-11-26
Yoo, Do Hyun
Static information storage and retrieval
Systems using particular element
Ferroelectric
365148, G11C 1122
Patent
active
055792588
ABSTRACT:
A nondestructive readout ferroelectric memory device for writing/reading information by reversing
ot reversing a ferroelectric polarization state, and a method for manufacturing the same includes a ferroelectric memory cell array having ferroelectric memory cells arrayed in matrix and each having a nonlinear resistor of ZnO/Bi.sub.2 O.sub.3 /ZnO, a ferroelectric substance, and an intermediate electrode of Pt interposed therebetween, and upper and lower electrodes intersecting each other and interposing the ferroelectric memory cells, or a ferroelectric memory cell array having ferroelectric memory cells arrayed in matrix and each having a nonlinear resistor both surfaces of which are covered with high-melting point metal and which is formed of a varistor thin film of (Sr.sub.1-X CaX)TiO.sub.3 +MeO formed by thermal treatment of metal alkoxide compound mixing liquid (precursor), a ferroelectric thin film of Pb(Zr . Ti)O.sub.3, and an intermediate electrode of Pt interposed therebetween, and upper and lower electrodes intersecting each other and interposing the ferroelectric memory cells. The above ferroelectric memory cell array includes x and Y decoders for selecting a desired ferroelectric memory cell and a voltage generator for applying a predetermined voltage only to a nonlinear resistor of the selected ferroelectric memory cell.
REFERENCES:
patent: 4259728 (1981-03-01), Geary et al.
patent: 5060191 (1991-10-01), Nagasaki et al.
patent: 5338951 (1994-08-01), Argos, Jr. et al.
Olympus Optical Co,. Ltd.
Yoo Do Hyun
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