Ferroelectric memory

Details Ferroelectric memory Ferroelectric memory

1998-12-10

2000-03-14

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

365 63, 365149, G11C 1122

Patent

active

060381612

ABSTRACT:
A ferroelectric memory includes ferroelectric capacitors C1, C2 held different in state of polarization from each other. Because of the difference in polarization state, a BL signal on a bit line BL and a BL/ signal on a bit line (/ means inversion), during reading, are different in level from each other. During re-writing, the BL signal is inverted by an inverter 18a while the BL/ signal is inverted by an inverter 18b. A first inverted signal from the inverter 18a is inputted through the bit line BL/ to the other end of a capacitor C1 and to one end of the capacitor C2. A second inverted signal from the inverter 18b is inputted through the bit line BL to one end of the capacitor C1 and to the other end of the capacitor C2. Due to this, the capacitors C1 and C2 are returned in polarization state to a former state.

REFERENCES:
patent: 5889695 (1999-03-01), Kawagoe
patent: 5936879 (1999-08-01), Brouwer et al.
patent: 5959878 (1999-09-01), Kamp

Affiliated with

Also associated with

Rating

Ferroelectric memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-175693