Ferroelectric memory

Static information storage and retrieval – Systems using particular element – Ferroelectric

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365117, 365109, G11C 1122

Patent

active

050601911

ABSTRACT:
A ferroelectric memory includes a ferroelectric thin film having first and second surfaces opposite to each other, a first electrode assembly having a plurality of stripe electrodes arranged in parallel on the first surface side of the ferroelectric thin film, a second electrode assembly having a plurality of stripe electrodes arranged in parallel on the second surface side of the ferroelectric thin film to intersect the stripe electrodes of said first electrode assembly, first and second common electrodes arranged separately from the end portions of the respective first and second electrode assemblies to extend in respective directions in which the stripe electrodes of the first and second electrode assemblies are arranged, and selecting sections for respectively connecting the first and second electrode assemblies to the first and second common electrodes and selectively activating at least one of the stripe electrodes of each of the first and second electrode assemblies.

REFERENCES:
patent: 3681765 (1972-08-01), Chapman
patent: 3871745 (1975-03-01), Waku et al.
patent: 4860254 (1989-08-01), Pott et al.
patent: 4873455 (1989-10-01), de Chambost et al.
Japanese Journal of Applied Physics, vol. 14, No. 11, pp. 1845-1846, Nov. 1975.

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