Ferroelectric materials and ferroelectric memory device made...

Details Ferroelectric materials and ferroelectric memory device made... Ferroelectric materials and ferroelectric memory device made...

2007-12-11

2007-12-11

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S296000, C257S297000, C257S298000, C257S303000, C257S306000, C361S321600, C365S145000

Reexamination Certificate

active

11150854

ABSTRACT:
A ferroelectric material includes a compound of formula (I):in-line-formulae description="In-line Formulae" end="lead"?(Pb1−x−zBazAx)(ByZr1−y)O3,   (I)in-line-formulae description="In-line Formulae" end="tail"?wherein 0≦x≦0.1, 0≦y≦0.020, 0.15≦z≦0.35, with the proviso that y≠0 when x=0, and that x≠0, when y=0; and wherein A is a first element having a valence number greater than that of Pb, and B is a second element having a valence number greater than that of Zr. A ferroelectric memory device made from the ferroelectric material is also disclosed.

REFERENCES:
patent: 5155658 (1992-10-01), Inam et al.
patent: 5248564 (1993-09-01), Ramesh
patent: 5403461 (1995-04-01), Tuller et al.
patent: 5519235 (1996-05-01), Ramesh
patent: 5838035 (1998-11-01), Ramesh
patent: 6194228 (2001-02-01), Fujiki et al.
patent: 6440324 (2002-08-01), Hayashi et al.

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