Ferroelectric material, ferroelectric film and method of...

Details Ferroelectric material, ferroelectric film and method of... Ferroelectric material, ferroelectric film and method of...

2007-03-06

2007-03-06

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S296000, C257SE21664

Reexamination Certificate

active

10807357

ABSTRACT:
A ferroelectric material for forming a ferroelectric that is described by a general formula ABO3, includes an A-site compensation component which compensates for a vacancy of an A site, and a B-site compensation component which compensates for a vacancy of a B site.

REFERENCES:
patent: 5378382 (1995-01-01), Nishimura et al.
patent: 2004/0136891 (2004-07-01), Kijima et al.
patent: 1 039 525 (1997-11-01), None
patent: WO 02/32809 (2002-04-01), None
U.S. Appl. No. 10/807,427, filed Mar. 24, 2004, Kijima et al.

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