Ferroelectric material, and semiconductor memory, optical record

Details Ferroelectric material, and semiconductor memory, optical record Ferroelectric material, and semiconductor memory, optical record

1996-06-04

1997-03-11

Nguyen, Viet Q.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365117, H01L 2710

Patent

active

056108532

ABSTRACT:
A ferroelectric material has hysteresis characteristics in the polarization-electric field relationship thereof, exhibits an antiferroelectric phase at room temperature, and carries out a structural phase transition from the antiferroelectric state to a ferroelectric phase with the application of an electric field thereto, and a phase transition electric field with which the antiferroelectric-to-ferroelectric phase transition is carried out is shifted to a lower electric field with the elevation of the temperature thereof, and a phase transition electric field with which a ferroelectric-to-antiferroelectric phase transition is carried out has a negative value. A semiconductor non-volatile memory, a rewritable optical recording medium, a highly integrated micro-displacement control device, and a shape memory device, each utilizing the above-mentioned ferroelectric material, are provided.

REFERENCES:
patent: 3973247 (1976-08-01), Kumada et al.
patent: 3990057 (1976-11-01), Kumada
patent: 5202054 (1993-04-01), Suzuki et al.
patent: 5374375 (1994-12-01), Yui et al.
patent: 5418389 (1995-05-01), Watanabe
patent: 5541422 (1996-07-01), Wolf et al.
patent: 5555219 (1996-09-01), Akiyama et al.

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