Ferroelectric film capacitor with intergranular insulation

Details Ferroelectric film capacitor with intergranular insulation Ferroelectric film capacitor with intergranular insulation

1995-07-12

1998-12-29

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, 438240, H01L 2702

Patent

active

058544992

ABSTRACT:
A method of making ferroelectric film capacitors with sufficient yield for application to ULSI. In a first embodiment, after formation of a first ferroelectric film as the capacitor ferroelectric film, a very thin second ferroelectric film is deposited to fill the cavity portions generated between the crystal grains. This reduces the leakage current and increases the capacitor yield. In second embodiment, the cavity portions are filled with an insulating layer.

REFERENCES:
patent: 4713157 (1987-12-01), McMillan et al.
patent: 4772985 (1988-09-01), Yasomoto et al.
patent: 5206788 (1993-04-01), Larson et al.
patent: 5561307 (1996-10-01), Mihara et al.
patent: 5567979 (1996-10-01), Nashimoto et al.

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