Ferroelectric element and method of manufacturing...

Details Ferroelectric element and method of manufacturing... Ferroelectric element and method of manufacturing...

2006-12-12

2006-12-12

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000, C257S288000, C257SE27104, C438S003000

Reexamination Certificate

active

07148532

ABSTRACT:
Additional elements of Ca, Sr, and Ir are added to a single layer lead lanthanum zirconate titanate (PLZT), thereby decreasing a c/a ratio to within a range from 1.00 to 1.008 smaller than a general c/a of a range from about 1.01 to 1.03 generally used in a lead lanthanum zirconate titanate (PLZT) crystal having a crystal structure of a tetragonal system. With this arrangement, a large switching charge Qsw can be obtained without thinning the PLZT layer even when the operation voltage is 3.0 V or less.

REFERENCES:
patent: 6312816 (2001-11-01), Roeder et al.
patent: 10-335596 (1998-12-01), None
patent: 2001-181094 (2001-07-01), None
patent: 2002-525876 (2002-08-01), None

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