Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-04
2006-04-04
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S003000
Reexamination Certificate
active
07023036
ABSTRACT:
A ferroelectric element is described which has a structure including a common electrode11,a ferroelectric film10formed on the common electrode11,an individual electrode3formed on the ferroelectric film10,a lead wire15for feeding electric power to the individual electrode3,which is formed on the same plane as of the individual electrode3,and a protection film16entirely covering the exposed parts of the ferroelectric film10and the individual electrode3,and covering the lead wire15.The protection film16is preferably made of a material whose Young's modulus is smaller than that of the ferroelectric film10,exactly 1/20 or smaller of the Young's modulus of the ferroelectric film10.Further, the ferroelectric film is formed with the insulation reinforcing film containing at least one of the elements constituting the ferroelectric film.
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Chikanawa Kazunari
Hara Shintaro
Matsubara Shogo
Nakano Takanori
Nishimura Kazuo
Abraham Fetsum
Pearne & Gordon LLP
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