Ferroelectric digital device

Static information storage and retrieval – Systems using particular element – Ferroelectric

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365157, G11C 1122

Patent

active

042623391

ABSTRACT:
Digital devices such as, e.g., shift registers and logical gates are disclosed which are predicated on domain wall motion in a film of a ferroelectric material, such as, e.g., gadolinium molybdate or lead germanate. Disclosed devices comprise electrodes on both sides of the film of ferroelectric material and may further comprise a resistive layer whose presence facilitates domain wall motion past inter-electrode gaps. Electrodes or facing portions of electrodes define regions in the film and, in particular, an input region and an output region.
To facilitate series connection of devices, electrodes are designed so as to cause energy gain during device operation. According to such design, surface area of an output region is larger than surface area of an input region. A current sensor is electrically connected to an electrode defining such output region.

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Kaufman, "Obtaining Nondestructive Readout with Ferroelectric Memories," Electronics, 8/25/61, pp. 47-51.
Jacobs et al., "Ferroelectric Devices", 1/73, vol. 15, No. 8, IBM Tech. Disc. Bul., pp. 2403-2404.

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