Ferroelectric device having a contact for taking the...

Details Ferroelectric device having a contact for taking the... Ferroelectric device having a contact for taking the...

2007-02-06

2009-11-10

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27104, C257S296000, C257S306000, C257S303000

Reexamination Certificate

active

07615814

ABSTRACT:
A semiconductor memory device includes: a first conductive layer; a second conductive layer; a first insulating film; a first plug; a second plug; a second insulating film having a first opening and a second opening; a first metal film; a second metal film; a first capacitor insulating film formed on the first metal film; a second capacitor insulating film formed on the second metal film; and a third metal film. The second metal film is formed so that an end thereof located away from the first opening extends onto the top surface of the second insulating film. The second metal film is connected at its extending portion to the third metal film.

REFERENCES:
patent: 2004/0094791 (2004-05-01), Ito et al.
patent: 2005-268494 (2005-09-01), None

Affiliated with

Also associated with

Rating

Ferroelectric device having a contact for taking the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric device having a contact for taking the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric device having a contact for taking the... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4118801