Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-05
2005-07-05
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S310000, C361S303000, C361S306300
Reexamination Certificate
active
06914282
ABSTRACT:
A ferroelectric subassembly for an integrated circuit includes a second layer lying between and in contact with first and third layers. The second layer comprises a ferroelectric material while the first and third layers comprise capacitor electrodes in contact with the second layer. At least a portion of the first layer contacting the second layer has the same crystal structure as the second layer. The first layer acts as both a seed layer for the ferroelectric material and as a capacitor electrode. One or both of the first and third layers may comprise LaNiO3(LNO). The second layer may, for example, comprise lead zirconate titanate (PZT), lead lanthanum zirconate titanate (PLZT) or SrBi2TaO9(SBT) or an appropriate combination thereof. Any lattice mismatch between the first and second layers and/or between the second and third layers may be less than about 5 percent.
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Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Nguyen Dao H.
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