Ferroelectric capacitors with metal oxide for inhibiting...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S296000, C257S310000

Reexamination Certificate

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06987308

ABSTRACT:
A method of forming a ferroelectric capacitor includes forming a lower electrode on a substrate. The lower electrode is oxidized to form a metal oxide film. A ferroelectric film is formed on the metal oxide film while reduction of the oxygen content of the metal oxide film is inhibited. An upper electrode is formed on the ferroelectric film.

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patent: 10-2002-0047515 (2002-06-01), None

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