Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-01-17
2006-01-17
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S296000, C257S310000
Reexamination Certificate
active
06987308
ABSTRACT:
A method of forming a ferroelectric capacitor includes forming a lower electrode on a substrate. The lower electrode is oxidized to form a metal oxide film. A ferroelectric film is formed on the metal oxide film while reduction of the oxygen content of the metal oxide film is inhibited. An upper electrode is formed on the ferroelectric film.
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Lee Moon-sook
Park Kun-sang
Fourson George
García Joannie Adelle
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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