Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-12
2007-06-12
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S310000
Reexamination Certificate
active
10650879
ABSTRACT:
Ferroelectric capacitors are provided that include an integrated circuit substrate and a supporting insulation layer on the integrated circuit substrate having a face and a trench in the face. An oxidation barrier conductive layer is provided in the trench and a lower electrode is provided on the oxidation barrier conductive layer. A ferroelectric layer is provided on the lower electrode and an upper electrode is provided on the ferroelectric layer. Related methods of fabricating ferroelectric capacitors are also provided.
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patent: 6764862 (2004-07-01), Park et al.
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Korean Patent Office, Notice to File a Response/Amendment to the Examination Report, Aug. 26, 2004.
Korean Patent Office, Notice to File a Response/Amendment to the Examination Report, Aug. 26, 2004 (English Translation).
Korean Patent Office, Notice to File a Response To a Rejection, corresponding to Korean Patent application 2002-54908, received Mar. 15, 2005.
Korean Patent Office, Notice to File a Response To a Rejection, corresponding to Korean Patent application 2002-54908, received Mar. 15, 2005 (English Translation).
Myers Bigel & Sibley & Sajovec
Trinh (Vikki) Hoa B.
Weiss Howard
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