Ferroelectric capacitor with rhodium electrodes

Details Ferroelectric capacitor with rhodium electrodes Ferroelectric capacitor with rhodium electrodes

1996-03-19

1998-05-12

Kincaid, Kristine L.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361305, 3613212, 361322, 357295, H01G 406

Patent

active

057515409

ABSTRACT:
A ferroelectric capacitor used as a memory cell in a ferroelectric random access memory (FRAM) is provided. The ferroelectric capacitor includes a substrate, an insulating layer formed on the substrate, a Rh lower electrode provided on the insulating layer, an adhesive layer between the insulating layer and the lower electrode, a ferroelectric layer provided on the lower electrode, and a Rh upper electrode provided on the ferroelectric layer. The Rh used as the electrode material is not affected by diffusion of Si due to its fine structure when compared to a Pt electrode, and has excellent electrical properties due to better electrical conductivity and good heat-transfer properties.

REFERENCES:
patent: 4437139 (1984-03-01), Howard
patent: 4982309 (1991-01-01), Shepherd
patent: 5003428 (1991-03-01), Shepherd
patent: 5191510 (1993-03-01), Huffman
patent: 5262920 (1993-11-01), Sakuma et al.

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