Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-05-22
2007-05-22
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S689000, C438S240000
Reexamination Certificate
active
11016400
ABSTRACT:
Methods (100) are provided for fabricating a ferroelectric capacitor structure including methods (128) for etching and cleaning patterned ferroelectric capacitor structures in a semiconductor device. The methods comprise etching (140, 200) portions of an upper electrode, etching (141, 201) ferroelectric material, and etching (142, 202) a lower electrode to define a patterned ferroelectric capacitor structure, and etching (143, 206) a portion of a lower electrode diffusion barrier structure. The methods further comprise ashing (144, 203) the patterned ferroelectric capacitor structure using a first ashing process, performing (145, 204) a wet clean process after the first ashing process, and ashing (146, 205) the patterned ferroelectric capacitor structure using a second ashing process directly after the wet clean process at a high temperature in an oxidizing ambient.
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Hall Lindsey H.
Moise, IV Theodore S.
Summerfelt Scott R.
Udayakumar Kezhakkedath R.
Brady III W. James
Garner Jacqueline J.
Goodwin David
Huynh Andy
Telecky , Jr. Frederick J.
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