Ferroelectric capacitor, process for production thereof and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S421000, C257SE27104

Reexamination Certificate

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06855974

ABSTRACT:
A ferroelectric capacitor includes a pair of electrodes, and at least one ferroelectric held between the pair of electrodes, in which the ferroelectric includes a first ferroelectric layer having a surface roughness (RMS) determined with an atomic force microscope of 10 nm or more; and a second ferroelectric layer being arranged adjacent to the first ferroelectric layer and having an RMS of 5 nm or less. A process produces such a ferroelectric capacitor by forming a first ferroelectric layer on or above one of a pair of electrodes at a temperature equal to or higher than a crystallization temperature at which the first ferroelectric layer takes on a ferroelectric crystalline structure, and forming a second ferroelectric layer on the first ferroelectric layer at a temperature lower than a crystallization temperature at which the second ferroelectric layer takes on a ferroelectric crystalline structure.

REFERENCES:
patent: 6121647 (2000-09-01), Yano et al.
patent: 6664116 (2003-12-01), Li et al.
patent: 6-68529 (1994-03-01), None
patent: 6-280023 (1994-10-01), None
patent: 8-31951 (1996-02-01), None
patent: 2000-40799 (2000-02-01), None
patent: 2000-232102 (2000-08-01), None
patent: 2001-284549 (2001-10-01), None
patent: 2002-16234 (2002-01-01), None

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