Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-29
2005-03-29
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S310000, C257S532000
Reexamination Certificate
active
06872995
ABSTRACT:
A ferroelectric capacitor has the property that polarization of a ferroelectric thin film can readily be reversed and polarization-reversal charge increased. The ferroelectric capacitor has a bottom electrode, a ferroelectric thin film and a top electrode. The top electrode includes a metal crystalline phase and 0.5 to 5 atm % interstitial oxygen atoms in the metal crystalline phase.
REFERENCES:
patent: 5864153 (1999-01-01), Nagel et al.
patent: 6454914 (2002-09-01), Nakamura
patent: 20020070404 (2002-06-01), Bruchhaus et al.
NEC Electronics Corporation
Tran Minh-Loan
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