Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-27
2007-02-27
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S303000, C257S306000, C257SE29076, C257SE29094
Reexamination Certificate
active
11033224
ABSTRACT:
Hydrogen barriers and fabrication methods are provided for protecting ferroelectric capacitors (CFE) from hydrogen diffusion in semiconductor devices (102), wherein nitrided aluminum oxide (N—AlOx) is formed over a ferroelectric capacitor (CFE), and one or more silicon nitride layers (112, 117) are formed over the nitrided aluminum oxide (N—AlOx). Hydrogen barriers are also provided in which an aluminum oxide (AlOx, N—AlOx) is formed over the ferroelectric capacitors (CFE), with two or more silicon nitride layers (112, 117) formed over the aluminum oxide (AlOx, N—AlOx), wherein the second silicon nitride layer (112) comprises a low silicon-hydrogen SiN material.
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Moise Theodore S.
Summerfelt Scott R.
Udayakumar K. R.
Brady III W. James
Garner Jacqueline J.
Lee Eddie
Matthews Colleen
Telecky , Jr. Frederick J.
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