Ferroelectric capacitor devices and FeRAM devices

Details Ferroelectric capacitor devices and FeRAM devices Ferroelectric capacitor devices and FeRAM devices

2006-02-21

2006-02-21

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S303000, C257S305000, C438S003000, C438S253000, C438S396000

Reexamination Certificate

active

07002196

ABSTRACT:
A ferroelectric capacitor device, such as an FeRAM device is formed of a substrate having one or more contact plugs extending therethrough, and a first interlayer dielectric layer formed on the substrate. A spacer layer is formed on the first interlayer dielectric layer, a first oxygen barrier layer is formed on the spacer layer and a buffer layer is formed on the first oxygen barrier layer. A layer of liner material is formed on the buffer layer between the buffer layer and the contact plugs and a dielectric layer is sandwiched between a first electrode and a second electrode. A second oxygen barrier layer is applied to the device. The spacer layer should prevent any oxidation from reaching the interface between the liner material and the contact plugs as this interface is located beneath the first oxygen barrier layer. As a result, the electrical contact is not damaged.

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