Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-11
2010-10-12
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21008, C257SE27098, C257SE29342, C438S003000
Reexamination Certificate
active
07812385
ABSTRACT:
A semiconductor device includes: a ferroelectric capacitor that is provided above a base substrate and includes a first electrode, a ferroelectric film provided on the first electrode and a second electrode provided on the ferroelectric film; a stopper film that covers a top surface of the second electrode of the ferroelectric capacitor; a hydrogen barrier film that covers a top surface and a side surface of the stopper film and a side surface of the ferroelectric capacitor; an interlayer dielectric film that covers the hydrogen barrier film and the base substrate; a contact hole that penetrates the interlayer dielectric film, the hydrogen barrier film and the stopper film and exposes the second electrode; a barrier metal that covers the second electrode exposed in the contact hole and an inner wall surface of the contact hole and is composed of a conductive material having hydrogen barrier property; and a plug conductive section that is embedded in the contact hole and conductively connects to the barrier metal, wherein the stopper film is formed from a dielectric material having a smaller etching rate than an etching rate of the interlayer dielectric film.
REFERENCES:
patent: 2006/0244023 (2006-11-01), Kanaya
patent: 09-213798 (1997-08-01), None
patent: 2003-347512 (2003-12-01), None
patent: 2006-310637 (2006-11-01), None
patent: 2006-332594 (2006-12-01), None
patent: 2007-027532 (2007-02-01), None
patent: 2007-109975 (2007-04-01), None
Machine English translation of JP 2007-27532, cited on IDS filed Oct. 27, 2009.
Fahmy Wael M
Harness & Dickey & Pierce P.L.C.
Ingham John C
Seiko Epson Corporation
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