Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-19
2006-12-19
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S303000, C257S306000, C257S307000, C257S308000, C257S309000, C257S310000
Reexamination Certificate
active
07151289
ABSTRACT:
A ferroelectric capacitor including a bottom electrode which has a projecting portion, a top electrode, a ferroelectric layer and a dielectric layer formed between the bottom electrode and the top electrode. The dielectric layer is formed on a peripheral area of the bottom electrode. The ferroelectric layer is formed on the dielectric layer and on the projecting portion of the bottom electrode. As a result, a damaged layer which is formed during an etching process occurs at the ineffective area of the ferroelectric capacitor.
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Gebremaraim Samuel A.
Oki Electric Industry Co. Ltd.
Owens Douglas W.
VolentineFrancos&Whitt PLLC
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