Ferroelectric capacitor and method of manufacturing the same

Details Ferroelectric capacitor and method of manufacturing the same Ferroelectric capacitor and method of manufacturing the same

2006-02-21

2006-02-21

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S310000

Reexamination Certificate

active

07002193

ABSTRACT:
A ferroelectric capacitor and a method of manufacturing the same are provided, wherein the ferroelectric capacitor of a semiconductor device, which sequentially includes a lower electrode, a ferroelectric layer, and an upper electrode on a conductive layer connected to a transistor formed on a semiconductor substrate, includes an oxidation preventing layer between the conductive layer and the lower electrode. The oxidation preventing layer prevents the conductive layer from being oxidized during high-temperature heat treatment of the ferroelectric layer. Accordingly, the oxidation resistivity of the interfaces of the conductive layer, used as a storage node, and the lower electrode, which faces the conductive layer, increases, so a temperature at which a ferroelectric thin layer is formed can be also increased. Consequently, a ferroelectric thin layer having excellent characteristics may be obtained.

REFERENCES:
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patent: 6303952 (2001-10-01), Aoki et al.
patent: 2003/0030084 (2003-02-01), Moise et al.
patent: 2003/0205738 (2003-11-01), Kanaya et al.
patent: 1999-0051335 (1999-07-01), None
patent: 1999-006044 (2000-07-01), None
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patent: 2001-0065297 (2001-07-01), None

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