Ferroelectric capacitor and method for manufacturing the same

Details Ferroelectric capacitor and method for manufacturing the same Ferroelectric capacitor and method for manufacturing the same

2006-12-12

2006-12-12

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27048, C257SE27104, C438S003000

Reexamination Certificate

active

07148530

ABSTRACT:
A ferroelectric capacitor and a method for manufacturing the same includes a lower electrode, a dielectric layer, and an upper electrode layer, which are sequentially stacked, wherein the dielectric layer has a multi-layer structure including a plurality of sequentially stacked ferroelectric films, and wherein two adjacent ferroelectric films have either different compositions or different composition ratios. Use of a ferroelectric capacitor according to an embodiment of the present invention, it is possible to hold stable polarization states of ferroelectric domains for a long retention time, and thus data written in the ferroelectric capacitor a long time ago can be accurately written, thereby improving the reliability of a ferroelectric random access memory (FRAM).

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