Ferroelectric capacitor and its manufacturing method and...

Details Ferroelectric capacitor and its manufacturing method and... Ferroelectric capacitor and its manufacturing method and...

2006-07-25

2009-06-16

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S071000, C257S295000

Reexamination Certificate

active

07547629

ABSTRACT:
A method for manufacturing a ferroelectric capacitor includes steps of: (a) forming a first crystalline barrier layer; (b) forming a second crystalline barrier layer composed of nitride by nitriding the first crystalline barrier layer; (c) forming a first electrode above the second crystalline barrier layer; (d) forming a ferroelectric film on the first electrode; and (e) forming a second electrode on the ferroelectric film.

REFERENCES:
patent: 6342425 (2002-01-01), Joo
patent: 7176132 (2007-02-01), Sashida et al.
patent: 7180141 (2007-02-01), Eliason et al.
patent: 2007/0040198 (2007-02-01), Matsuura
patent: 09-252094 (1997-09-01), None
patent: 10-056140 (1998-02-01), None
patent: 10-214944 (1998-08-01), None
patent: 2000-277701 (2000-10-01), None
patent: 2004-153031 (2004-05-01), None
patent: 2004-186517 (2004-07-01), None

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