Ferroelectric capacitor and a semiconductor device

Details Ferroelectric capacitor and a semiconductor device Ferroelectric capacitor and a semiconductor device

2005-01-11

2005-01-11

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S003000

Reexamination Certificate

active

06841817

ABSTRACT:
A ferroelectric capacitor includes a lower electrode, a ferroelectric film provided over the lower electrode and having a perovskite-type structure and an upper electrode provided over the ferroelectric film. The ferroelectric film includes a first ferroelectric film part having a first crystal system and formed along at least one interface with at least one of the lower electrode and the upper electrode and a second ferroelectric film part having a second crystal system that is different from the first crystal system.

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Office Action for Chinese Patent Application No. 02116117.8 dated Mar. 12, 2004.

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