Ferroelectric capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S300000, C257SE27016, C257SE27155

Reexamination Certificate

active

07423308

ABSTRACT:
A ferroelectric capacitor includes a lower electrode, a ferroelectric film provided over the lower electrode and having a perovskite-type structure and an upper electrode provided over the ferroelectric film. The ferroelectric film includes a first ferroelectric film part having a first crystal system and formed along at least one interface with at least one of the lower electrode and the upper electrode and a second ferroelectric film part having a second crystal system that is different from the first crystal system.

REFERENCES:
patent: 5387459 (1995-02-01), Hung
patent: 5572052 (1996-11-01), Kashihara et al.
patent: 5656382 (1997-08-01), Nashimoto
patent: 5683614 (1997-11-01), Boyle
patent: 5719417 (1998-02-01), Roeder et al.
patent: 5811181 (1998-09-01), Kijima et al.
patent: 5850089 (1998-12-01), Varshney et al.
patent: 5900274 (1999-05-01), Chatterjee et al.
patent: 5998236 (1999-12-01), Roeder et al.
patent: 6060736 (2000-05-01), Noshiro
patent: 6090443 (2000-07-01), Eastep
patent: 6229166 (2001-05-01), Kim et al.
patent: 6238966 (2001-05-01), Ueda et al.
patent: 6258459 (2001-07-01), Noguchi et al.
patent: 6285051 (2001-09-01), Ueda et al.
patent: 6376090 (2002-04-01), Kijima
patent: 6385355 (2002-05-01), Nashimoto et al.
patent: 6387225 (2002-05-01), Shimada et al.
patent: 6411017 (2002-06-01), Qiu et al.
patent: 6440210 (2002-08-01), Bruchhaus et al.
patent: 6440243 (2002-08-01), Tan et al.
patent: 6507060 (2003-01-01), Ren et al.
patent: 6511161 (2003-01-01), Sumi et al.
patent: 6523943 (2003-02-01), Fukui
patent: 6526833 (2003-03-01), Avrahami et al.
patent: 6541279 (2003-04-01), Hayashi et al.
patent: 6541375 (2003-04-01), Hayashi et al.
patent: 6576546 (2003-06-01), Gilbert et al.
patent: 6602344 (2003-08-01), Natori et al.
patent: 6627930 (2003-09-01), Fox et al.
patent: 6748635 (2004-06-01), Sumi et al.
patent: 6841817 (2005-01-01), Kurasawa et al.
patent: 2002/0015852 (2002-02-01), Noguchi et al.
patent: 2002/0153543 (2002-10-01), Kijima
patent: 1 150 344 (2001-10-01), None
patent: 63-236797 (1988-10-01), None
patent: 04-171976 (1992-06-01), None
patent: 06-089986 (1994-03-01), None
patent: 10-214945 (1998-08-01), None
patent: 11-330411 (1999-11-01), None
patent: 2000-031399 (2000-01-01), None
patent: 2001-196652 (2001-07-01), None
patent: 00/33361 (2000-06-01), None
U.S. Appl. No. 10/103,894, filed Mar. 25, 2002, Masaki Kurasawa et al., Fujitsu Limited.
Scott, J.F., et al., “Quantitative Measurement of Space-Charge Effects in Lead Zirconate-Titanate Memories”, Journal of Applied Physics, vol. 70, No. 1, Jul. 1, 1991, pp. 382-388.
Kim, Min Hong, et al., “Highly (200)-Oriented Pt Films on Si02/Si Substrates by Seed Selection Through Amorphization and Controlled Grain Growth”, J. Mater.Res.Soc. 14 (1999), pp. 634-637.
Office Action for Chinese Patent Application No. 02116117.5 dated Mar. 12, 2004.
Japanese Office Action dated Jan. 24, 2006 issued in corresponding Japanese Application No. 2001-336576.
European Search Report issued in European Application No. 02007739.2, dated Aug. 29, 2007 (4 pages).
Doi et al., “Influence of Buffer Layers and Excess Pb/Zr+Ti Ratios on Fatigue Characteristics of Sol-Gel Derived Pb(Zr, Ti)O3Thin Films”,Japanese Journal of Applied Physics, Japan Society of Applied Physics, vol. 34, No. 9B, Sep. 1995.

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