Ferroelectric-based RAM sensing scheme including bit-line capaci

Details Ferroelectric-based RAM sensing scheme including bit-line capaci Ferroelectric-based RAM sensing scheme including bit-line capaci

1993-06-24

1995-01-10

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122

Patent

active

053813642

ABSTRACT:
A ferroelectric memory includes a bit line for developing a signal coupled to a ferroelectric memory cell. An integrated load capacitor and sense amplifier are also coupled to the bit line. An isolation circuit is included for selectively electrically isolating the bit line load capacitor from the sense amplifier and ferroelectric memory cell during the active operation of the sense amplifier. The isolation circuit is compatible with both non-volatile ferroelectric and volatile dynamic memory operation.

REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4888733 (1989-12-01), Mobley
patent: 5010518 (1991-04-01), Toda
patent: 5068831 (1991-11-01), Hoshi
patent: 5079746 (1992-01-01), Sato
Womack et al., "A 16 kb Ferroelectric Nonvolatile Memory With a Bit Parallel Architecture" 1989 IEEE International Solid-State Circuits Conference (Feb. 1989).

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