Ferroelectric based memory devices utilizing low curie point fer

Details Ferroelectric based memory devices utilizing low curie point fer Ferroelectric based memory devices utilizing low curie point fer

1996-07-29

1999-11-02

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

365145, 365171, 257303, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059775777

ABSTRACT:
A ferroelectric memory cell for storing information. The information is stored in the remnant polarization of a ferroelectric dielectric layer by setting the direction of the remnant polarization. The ferroelectric memory cell is designed to store the information at a temperature less than a first temperature. The memory cell includes top and bottom contacts that sandwich the dielectric layer which includes a ferroelectric material having a Curie point greater than the first temperature and less than 400.degree. C. The dielectric layer is encapsulated in an oxygen impermeable material such that the encapsulating layer prevents oxygen from entering or leaving the dielectric layer. One of the contacts is typically includes a platinum electrode. The other contact may include a similar electrode or a semiconductor layer having electrodes spaced apart thereon.

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